Gallium nitride (GaN) is a wide-bandgap
semiconductor material derived from gallium and nitrogen.
Used in LEDs since the 1990s, it is known for its
robust, hexagonal crystal structure and can handle larger electric fields in a
compact form factor compared to silicon, enabling faster switching.
Apple’s first GaN charger was for the 16-inch
MacBook Pro in 2021, and if you own an iPhone iPhone 15, you’re likely using a GaN
charger.
It turns out that GaN could be even more impressive
than previously thought. Sensors used to monitor a nuclear reactor's cooling
system typically struggle with accuracy due to radiation.
Researchers from the Department of Energy's Oak
Ridge National Laboratory (ORNL) discovered that combining the sensors with
high-performance electronics made from GaN solved the problem.
ORNL’s materials science team found a GaN transistor
maintained operations near the core of a nuclear reactor at The Ohio State
University.
"We are showing it is great for this neutron
environment," said Kyle Reed, lead researcher at ORNL. This advancement is
significant for nuclear facilities where early condition monitoring can prevent
equipment failure and reactor downtime.
Current sensor data processing relies on
silicon-based electronics connected by long cables, introducing noise and
reducing accuracy. "Our work makes measuring conditions inside an
operating nuclear reactor reactor more robust and accurate," Reed noted.
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